搜索结果: 1-10 共查到“理学 MIS 8”相关记录10条 . 查询时间(0.042 秒)
底栖有孔虫d18O主要包含了深海温度和大陆冰量的信号，全球d18O堆叠记录显示海洋氧同位素期次（MIS）16期(676-621千年)和MIS 12期(478-424千年)是过去800千年期间最为显著两个冰期。这两个冰期具有高度相似的d18O和海平面重建结果，反映其大陆冰量或海平面状况接近。但是，MIS 16期全球平均海水表层温度比MIS 12期高约0.54-0.79℃，而MIS 16期间的大气CO...
西安电子科技大学半导体物理II课件第八章 半导体表面与MIS结构
西安电子科技大学 半导体物理 课件 MIS结构
2019/5/13
西安电子科技大学半导体物理II课件第八章 半导体表面与MIS结构。
西北大学半导体物理学课件第八章 半导体表面与MIS结构
西北大学 半导体物理学 课件 第八章 半导体表面与MIS结构
2017/4/6
西北大学半导体物理学课件第八章 半导体表面与MIS结构。
Biomarker and Sedimentological Investigations of MIS 8 through MIS 12 from Lake El'gygytgyn, NE Arctic Russia
Biomarker Sedimentological Investigations MIS 8 MESES 12 from Lake El'gygytgyn NE Arctic Russia
2014/10/21
Multiple proxy analysis of lake sediment records are crucial for understanding changes in environmental and climate conditions over historical and geological time. Most recently, the use of biomarker ...
Affine stratifications from finite misère quotients
Affine stratifications finite misère quotients
2010/12/3
Given a morphism from an affine semigroup Q to an arbitrary commutative monoid, it is shown that every fiber possesses an affine stratification: a partition into a finite disjoint union of translates ...
Individual and combined effects of ice sheets and precession on MIS-13 climate
ice sheets MIS-13 climate precession
2009/12/3
An Earth System Model of Intermediate Complexity is used to investigate the role of insolation and of the size of ice sheets on the regional and global climate of marine isotope stage (MIS) 13. The as...
“太阳号” 17954站位于南海西部越南岸外夏季上升流区, 沉积物记录了东亚夏季风的变化. 本次研究在AMS 14C测年基础上建立了严格的年龄框架, 利用浮游有孔虫Globigerinoides ruber (white s.s.)的Mg/Ca-古海水温度计, 对17954柱状样氧同位素三期(MIS 3)表层海水古温度和盐度进行估算, 并结合温跃层以及有孔虫初级生产力的变化探讨东亚夏季风在MIS ...
The δ18O record in deep-sea sediments show a significant reduced amplitude of the ice volume variations before Marine Isotope Stage 11, about 400 ka ago, with less warm interglacials and less cold gla...
Application of PMA Towards Moderating the Charge Storage Capability of MIS Memory Cell Based on PECVD Deposited Silicon Nitride Thin Films
PECVD Nitride films C-V G-V I-V P M A hysteresis and memory window
2010/4/9
A memory capacitor formed from Al/Si3N4/Si was prepared by means of trapping and de trapping mechanism of the dielectric films. Charge trapping and interface state characteristics of silicon nitride (...
Photoluminescence Characterization of Al/Al2O3/InP MIS Structures passivated by anodic oxidation
Indium phosphide MIS structures Photoluminescence
2010/4/12
Metal-insulator-semiconductor (MIS) structures were produced by electron beam evaporation of Al2O3 on InP. Polyphosphate thin films of thickness 100-150 Å were used to passivate the interface In...