搜索结果: 1-15 共查到“凝聚态物理学 Semiconductor”相关记录30条 . 查询时间(0.073 秒)
2024年3月13日，中国科学院长春光机所佟存柱研究员团队在光子晶体面发射激光器（PCSEL）研究领域取得重要进展，提出三晶格结构并实现低阈值1550nm PCSEL，相关成果发表在Light：Science and Application vol.13，44，2024，国际半导体行业著名刊物《Semiconductor Today》以“Triple-lattice photonic ...
With a little twist and the turn of a voltage knob, Cornell researchers have shown that a single material system can toggle between two of the wildest states in condensed matter physics: the quantum a...
Multivariable feedback control of semiconductor wafer temperature
Multivariate semiconductor chip temperature temperature control chip rapid heat treatment semiconductor chips sensors
2015/8/12
The authors consider the problem of wafer temperature control in rapid thermal processing (RTP) of semiconductor wafers. They present a novel approach to the analysis of candidate sensor configuration...
Physicists in the US and the UK have found a way to store and read data in nuclear spins using electronic pulses. The breakthrough could help in the development of spintronic systems that process info...
Metamaterial inspired perfect tunneling in semiconductor heterostructures
Metamaterial inspired perfect semiconductor heterostructures
2010/11/24
In this paper we are using formal analogy of electromagnetic wave equation and Schr¨odinger equatio in order to study the phenomenon of perfect tunneling (tunneling with unitary transmittance)in 1D se...
Optoelectronic cooling of mechanical modes in a semiconductor nanomembrane
Optoelectronic cooling of mechanical modes semiconductor nanomembrane
2010/11/24
Optical cavity cooling of mechanical resonators has recently become a research frontier [1–3]. The cooling has been realized with a metal-coated silicon microlever via photo-thermal force [4] and subs...
The Quantum Boltzmann Equation in Semiconductor Physics
Nonequilibrium kinetics excitons,plasma Bose-Einstein condensation
2010/11/23
The quantum Boltzmann equation, or Fokker-Planck equation, has been used to successfully explain a number of experiments in semiconductor optics in the past two decades. This paper reviews some of the...
Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry
Double quantum dot enhancement-mode silicon lateral geometry
2010/11/17
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device...
Semiconductor quantum ring as a solid-state spin qubit
Semiconductor quantum ring solid-state spin qubit
2010/11/19
The implementation of a spin qubit in a quantum ring occupied by one or a few electrons is proposed. Quantum bit involves the Zeeman sublevels of the highest occupied orbital. Such a qubit can be init...
Giant Stark effect in the emission of single semiconductor quantum dots
Giant Stark effect single semiconductor quantum dots
2010/11/19
We study the quantum-confined Stark effect in single InAs/GaAs quantum dots embedded within a AlGaAs/GaAs/AlGaAs quantum well. By significantly increasing the barrier height we can observe emission fr...
Nonequilibrium free energy, H theorem and self-sustained oscillations for Boltzmann-BGK descriptions of semiconductor superlattices
Nonequilibrium processes Boltzmann equation current fluctuations
2010/11/22
Semiconductor superlattices (SL) may be described by a Boltzmann-Poisson kinetic equation with a Bhatnagar-Gross-Krook (BGK) collision term which preserves charge, but not momentum or energy.
Field-induced water electrolysis switches an oxide semiconductor from an insulator to a metal
Field-induced water electrolysis switches oxide semiconductor
2010/11/23
Water is composed of two strong electro-chemically active agents, H+ and OH– ions,for oxide semiconductors though water has never been utilized as an active electronic material. Here we demonstrate th...
Capacitance-voltage profiling techniques for characterization of semiconductor materials and devices
Capacitance-voltage profiling techniques characterization of semiconductor materials devices
2010/11/23
This work re-defines the well-known C-V (capacitance-voltage)measurement technique, in the view of a new physics formula,discovered in 2006 [1].
Resonant Light Absorption by Semiconductor Quantum Dots
Light Absorption quantum wells Semiconductor Quantum Dots
2009/9/4
The cross-section of light absorption by size-quantized semiconductor quantum dots (QD) is calculated in the case of a resonance with an exciton Γ6×Γ7 in cubical crystals of Td class. The interference...
Potential Performance of SiC and GaN Based Metal Semiconductor Field Effect Transistors
Ballistic transport frequency response Steady-state Drain current
2010/7/5
A Monte Carlo simulation has been used to model steady-state electron transport in SiC and GaN field effect transistor. The simulated device geometries and doping are matched to the nominal parameters...