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Reformulation of the Muffin-Tin Problem in Electronic Structure Calculations within the FEAST Framework
Electronic Structure FEAST Muffin-tin Density Functional Theory
2014/12/8
This thesis describes an accurate and scalable computational method designed to perform nanoelectronic structure calculations. Built around the FEAST framework, this method directly addresses the nonl...
New paths were designed for the investigations of the-tin!Imma!sh phase transitions in nanocrystalline Ge under conditions of hydrostatic stress. A second-order transition between the-tin andImmapha...
Tin Whisker User Group Publishes Updated Set of Recommendationsto Help Reduce Risk of Tin Whiskers
Tin Whisker Electronics
2006/12/25
HERNDON, Va. (December 15, 2006) — The International Electronics Manufacturing Initiative’s Tin Whisker User Group announces a major update of its publication, “Recommendations on Lead-Free Finishes f...
Physical Properties of Sputtered Germanium-Doped Indium Tin Oxide Films (ITO: Ge) Obtained at Low Deposition Temperature
Sputtered Germanium-Doped Indium Tin Oxide Films Low Deposition Temperature
2010/12/16
Undoped and Ge-doped ITO films (ITO: Ge) deposited at low temperature (70℃) have been studied. Although both samples have the same carrier concentration, a higher carrier mobility occurs for ITO: Ge. ...
Influence of Thermal Treatment Under Various Oxygen Pressures on The Electronic Properties of Ceramics and Single Crystals of Pure and Tin-Doped Indium Oxide
Thermal Treatment Oxygen Pressures Tin-Doped Indium Oxide
2010/12/16
The different electronic behaviors of pure and tin-doped indium oxides with various thermal treatments under high and low oxygen pressure are discussed on the basis of the evolution of the band energy...